cs8n65f场效应管参数,cs12n60场效应管参数

cs8n65f场效应管参数,cs12n60场效应管参数

全新CS8N65F8A650V代替K8A65DTK8A65DTF8N65效应一换三极管全新CS8N65F 8A 650V代替K8A65D TK8A65D TF8N65场效应管一换即好价格：¥1.25 券后：¥1.25 发货地：广东深圳¥1.25元型号：CS8N65FA9H --- 产品参数--- 型号CS8N65FA9H 封装TO220F --- 产品详情--- 华润微CS8N65FA9H_TO220F 场效应管650V8A 现货供应MOS管产品OC6813_SOT23-3 欧创芯超低功耗DC-DC升压恒压芯片IC

⊙▽⊙ 原装正品NCE6050KA TO-252-2 60V/50A N沟道MOS场效应管芯片¥ 0.46 100 IRF540/640/630/IRFZ44/3205PBF/4905/p75nf75 mos场效应管TO220 ¥ 2.98 100 贴片2N7002 SOT-23 MOS 管/N沟道场效应Huajing Discrete Devices R ○ Silicon N-Channel Power MOSFET CS8N65FA9H General Description: VDSS 650 V CS8N65FA9H, the silicon N-channel Enhanced ID

型号：CS8N65F 类型：N沟道场效应管耗散功率(PD):38 W 漏极电流(ID):【管壳温度(Tc)=25 ℃】8 A 漏极和源极电压(VDSS):650 V 漏极和源极通态电阻(RDS(on)):1Ω 封装：TO-220F 8N65封装有TO-220/TO-220F/TO-252 8N65场效应管参数如下：Drain-Source Voltage 漏源电压Vds:650V Gate-Source Voltage 栅源电压Vgs:±30V Continuous Drain Current 漏极电流Id Tc